Gallium nitride (GaN) substrates are materials made from the crystalline form of gallium nitride. These substrates have unique properties that make them highly useful for electronic and optoelectronic applications.
High electron mobility: GaN substrates have a high electron mobility, which means that they can transport electrons with minimal resistance. This makes them useful for high-speed electronic devices.
High breakdown voltage: GaN substrates have a high breakdown voltage, which means that they can handle high electric fields without breaking down. This makes them useful for high-power electronic devices.
Wide bandgap: GaN substrates have a wide bandgap, which means that they can operate at high temperatures and handle high levels of radiation. This makes them useful for applications in harsh environments.
Low defect density: GaN substrates have a low defect density, which means that they have fewer defects in their crystal structure. This makes them useful for high-performance electronic and optoelectronic devices.
Markets & Applications
Power electronics: GaN substrates are used in power electronics, such as inverters and converters, because of their high breakdown voltage and low on-resistance.
RF and microwave devices: GaN substrates are used in RF and microwave devices, such as amplifiers and transistors, because of their high electron mobility and wide bandgap.
LED lighting: GaN substrates are used in LED lighting because of their ability to handle high levels of radiation and high temperatures.
Solar cells: GaN substrates are used in solar cells because of their wide bandgap and ability to handle high levels of radiation.