GaN Substrates

GaN Substrates

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Alumina Ceramics

Alumina Ceramic Tube

Alumina Ceramic Rod

Alumina Ceramic Substrates

Alumina Ceramic Disc

Alumina Ceramic Plate

Alumina Ceramic Roller

Alumina Ceramic Crucible

Alumina Ceramic Ring

Alumina Ceramic Part

Ceramic Ignition Electrode series

Zirconia Ceramics

Zirconia Ceramic Tube

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Zirconia Ceramic Plate

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Zirconia Ceramic Ring

Zirconia Part

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Silicon Carbide Ceramics

RBSiC

SSiC

R-SiC

Aluminum Nitride Ceramics

Aluminum Nitride Substrates

Aluminum Nitride Tube

Aluminum Nitride Plate

Aluminum Nitride Disc

Aluminum Nitride Part

Boron Carbide Ceramics

Boron Carbide Tiles

Boron Carbide Plate

Boron Carbide Insert

Boron Carbide Bushing

Boron Carbide Tube

Boron Carbide Nozzle

Boron Carbide Ball

Boron Nitride Ceramics (BN)

Boron Nitride Tube

Boron Nitride Plate

Boron Nitride Ring

Boron Nitride Nozzle

Boron Nitride Crucible

Boron Nitride Part

Pyrolytic Boron Nitride (PBN)

PBN Crucible

PBN Plate

PBN Tube

PBN Ring

PBN Part

Silicon Nitride (Si3N4) Ceramics

Silicon Nitride Substrates

Silicon Nitride Bearing

Silicon Nitride Igniter

Silicon Nitride Balls

Silicon Nitride Tube

Silicon Nitride Part

Beryllium Oxide Ceramics

BeO Tube

BeO Substrates

BeO Ring

Mullite Ceramics

Mullite Ceramic Part

Mullite Ceramic Tube

Mullite Ceramic Plate

GaN Ceramics

GaN Substrates

GaN wafer

Graphite

Graphite Crucible

Graphite Rotors and Shaft

Graphite Plate

Graphite Rod

Graphite Tube

Graphite Ring

Graphite Heater

Graphite Launder

Graphite Cylinde

Graphite Nozzle

Graphite Blocks

Quartz

Quartz Tube

Quartz Rod

Quartz Plate

Quartz Crucible

Quartz Ring

Tugnsten Carbide

Tungsten Carbide Rod

Tungsten Carbide Strips/Plate

Tungsten Carbide Burrs

Tungsten Carbide Dies

Tungsten Carbide Balls

GaN Substrates

Gallium nitride (GaN) substrates are materials made from the crystalline form of gallium nitride. These substrates have unique properties that make them highly useful for electronic and optoelectronic applications.

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Product Description

Features & Benefits

  • High electron mobility: GaN substrates have a high electron mobility, which means that they can transport electrons with minimal resistance. This makes them useful for high-speed electronic devices.
  • High breakdown voltage: GaN substrates have a high breakdown voltage, which means that they can handle high electric fields without breaking down. This makes them useful for high-power electronic devices.
  • Wide bandgap: GaN substrates have a wide bandgap, which means that they can operate at high temperatures and handle high levels of radiation. This makes them useful for applications in harsh environments.
  • Low defect density: GaN substrates have a low defect density, which means that they have fewer defects in their crystal structure. This makes them useful for high-performance electronic and optoelectronic devices.

Markets & Applications

  • Power electronics: GaN substrates are used in power electronics, such as inverters and converters, because of their high breakdown voltage and low on-resistance.
  • RF and microwave devices: GaN substrates are used in RF and microwave devices, such as amplifiers and transistors, because of their high electron mobility and wide bandgap.
  • LED lighting: GaN substrates are used in LED lighting because of their ability to handle high levels of radiation and high temperatures.
  • Solar cells: GaN substrates are used in solar cells because of their wide bandgap and ability to handle high levels of radiation.