GaN wafer

GaN wafer

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GaN wafer

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GaN wafer

GaN wafer is a type of substrate made from gallium nitride (GaN) material, which is commonly used in the semiconductor industry. It serves as a base for the growth of thin films, such as those used in the production of light-emitting diodes (LEDs) and high-power electronics.

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Product Description

Features & Benefits

  • High thermal conductivity
  • High electron mobility
  • High breakdown voltage
  • Wide bandgap
  • High optical transparency
  • Chemical and radiation resistance
  • High power efficiency and performance in electronic and optoelectronic devices
  • Superior heat dissipation capabilities in high-temperature applications
  • Reduced power loss due to low resistance and capacitance
  • High reliability and durability in harsh environments
  • Ability to operate at high frequencies
  • Compatibility with existing semiconductor fabrication processes

Markets & Applications

  • LED production: GaN is a key material used in the production of blue and green LEDs, as well as white LEDs when combined with phosphors.
  • High-power electronics: GaN-based transistors can handle high voltages and frequencies, making them ideal for power electronics such as inverters and converters.
  • RF/microwave devices: GaN-based devices can operate at high frequencies, making them useful in wireless communication systems.
  • Solar cells: GaN has been studied for use as a substrate in the production of high-efficiency solar cells.
Parameter Value
Crystal structure Hexagonal
Lattice constant 3.189 Å
Thermal expansion 5.6 x 10^-6 K^-1
Thermal conductivity 1.3 W/cm-K
Melting point 1700 °C
Bandgap 3.4 eV
Resistivity > 10^10 Ω-cm
Size Up to 6 inches in diameter
Surface finish Epi-ready or polished